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DIM375WKS06-S000
DIM375WKS06-S000
IGBT Chopper Module (Upper Arm Control)
DS5732-1.0 February 2004
FEATURES
I I
KEY PARAMETERS VCES VCE(sat)* (typ) IC IC(PK) (max) (max) 600V 2.1V 375A 750A
Low Forward Voltage Drop Isolated Copper Baseplate
APPLICATIONS
I I
Choppers Motor Controllers
*(measured at the power busbars and not the auxiliary terminals)
The Powerline range of modules includes half bridge, chopper, bi-directional, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 3600A. The DIM375WKS06-S000 is a 600V n channel enhancement mode, insulated gate bipolar transistor (IGBT) chopper module configured with the upper arm of the bridge controlled. The module is suitable for a variety of medium voltage applications in motor drives and power conversion. The IGBT has a wide reverse bias safe operating area (RBSOA) for ultimate reliability in demanding applications. These modules incorporate electrically isolated base plates and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. Typical applications include dc motor drives, ac pwm drivesand ups systems.. Fig. 1 Chopper circuit diagram
1(K,E) 2(A) 3(C1)
4(G1) 5(E1)
ORDERING INFORMATION
Order as: DIM375WKS06-S000
Note: When ordering, use complete part number.
Outline type code: W (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value Isolation voltage - per module Tcase = 65C 1ms, Tcase = 95C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 600 20 375 750 1736 TBD 2.5 Units V V A A W kA2s kV
THERMAL AND MECHANICAL RATINGS
Internal insulation: Al2O3 Baseplate material: Cu Creepage distance: 24mm Symbol Rth(j-c) Parameter Thermal resistance - transistor arm Clearance: 13mm CTI (Critical Tracking Index): 175
Test Conditions Continuous dissipation junction to case
Min. -
Typ. -
Max. 72
Units C/kW
Rth(j-c)
Thermal resistance - diode (per arm) (Antiparallel and freewheel diode)
Continuous dissipation junction to case Mounting torque 5Nm (with mounting grease) Transistor Diode
-
-
135
C/kW
Rth(c-h)
Thermal resistance - case to heatsin (per module)
-
-
15
C/kW
Tj
Junction temperature
-40 3 2.5
-
150 125 125 5 5
C C C Nm Nm
Tstg -
Storage temperature range Screw torque Mounting - M6
Electrical connections - M6
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current (IGBT and Diode arm) IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C VGE = 20V, VCE = 0V IC = 15mA, VGE = VCE VGE = 15V, IC = 350A VGE = 15V, IC = 350A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage (IGBT and Diode arm) Cies LM RINT Input capacitance Module inductance Internal transistor resistance - per arm DC tp = 1ms IF = 350A IF = 350A, Tcase = 125C VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 2.1 2.3 1.5 1.5 40 20 0.23 Max. 2 10 2 7.5 2.6 2.8 375 750 1.8 1.8 Units mA mA A V V V A A V V nF nH m
Note: Measured at the power busbars and not the auxiliary terminals. L* is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
3/8
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DIM375WKS06-S000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 375A, VR = 300V, dIF/dt = 3000A/s Test Conditions IC = 375A VGE = 15V VCE = 300V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 600 250 26 200 150 16 3 20 200 5 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 375A, VR = 300V, dIF/dt = 3000A/s Test Conditions IC = 375A VGE = 15V VCE = 300V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 650 500 40 200 100 15 30 230 8 Max. Units ns ns mJ ns ns mJ C A mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
TYPICAL CHARACTERISTICS
700 Common emitter Tcase = 25C Vce is measured at power busbars and not the auxiliary terminals
700 Common emitter Tcase = 125C Vce is measured at power 600 busbars and not the auxiliary terminals 500
600
500
Collector current, Ic - (A)
400
Collector current, Ic - (A)
400
300
300
200
200
100
0 0
VGE = 10V VGE = 12V VGE = 15V VGE = 20V 1 2.0 3 4 Collector-emitter voltage, Vce - (V) 5
100
0 0
VGE = 10V VGE = 12V VGE = 15V VGE = 20V 1.0 2.0 3.0 4.0 5.0 6.0 Collector-emitter voltage, Vce - (V)
Fig.3 Typical output characteristics
45 60
Fig.4 Typical output characteristics
Conditions: Tcase = 125C 40 Vcc = 300V Rg = 4.7 ohms 35
Eoff Eon Erec 50
Switching energy, Esw - (mJ)
30 25 20 15 10
Switching Energy, Esw - (mJ)
Eon Eoff Erec 50 100 150 200 250 300 Collector current, IC - (A) 350 400
40
30
20
10 5 0 0
0 2 4 10 12 6 8 Gate resistance, Rg - (Ohms) 14 16
Fig.4 Typical switching energy vs collector current
Fig.5 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
700 VF is measured at power busbars and not the auxiliary terminals 600 Tj = 25C Tj = 125C
Collector current, IC - (A)
900 800 700
500
Foward current, IF - (A)
600 Chip 500 400 300 200 100 0 0 Tj = 125C Vge = 15V Rg = 4.7 600 200 400 Collector-emitter voltage, Vce - (V) 800 Module
400
300
200
100
0
0
0.5
2.0 1.0 1.5 Foward voltage, VF - (V)
2.5
3.0
Fig.6 Diode typical forward characteristics
300 Tj = 125C
Fig.7 Reverse bias safe operating area
1000 Transistor Diode
250
Transient thermal impedance, Zth (j-c) - (C/kW )
Reverse recovery current, Irr - (A)
200
100
150
100
10
50
IGBT Diode
0 0
100
200 300 400 500 Reverse voltage, VR - (V)
600
700
1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01
1 2 3 1.6941 6.7097 9.0831 0.1069 4.363 21.9182 3.0955 17.2139 16.1073 0.0895 2.6571 17.3886 1
4 54.477 92.4022 98.6071 71.8108 10
0.1 Pulse width, tp - (s)
Fig.7 Diode reverse bias safe operating area
Fig.8 Transient thermal impedance
6/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM375WKS06-S000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
1(K,E)
2(A)
3(C1)
4(G1) 5(E1)
Nominal weight: 420g Module outline type code: W
Fig. 15 Package details
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0)1522-500500 Fax: +44-(0)1522-500550 CUSTOMER SERVICE Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 SALES OFFICES Benelux, Italy & Switzerland: Tel: +33 (0)1 64 66 42 17. Fax: +33 (0)1 64 66 42 19. France: Tel: +33 (0)2 47 55 75 53. Fax: +33 (0)2 47 55 75 59. Germany, Northern Europe, Spain & Rest Of World: Tel: +44 (0)1522 502753 / 502901. Fax: +44 (0)1522 500020 North America: Tel: (440) 259-2060. Fax: (440) 259-2059. Tel: (949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRODUCED IN UNITED KINGDOM
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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